Title :
A robust gated-field-emission triode
Author :
Lu, S.-C. ; Huang, J.C.-M. ; Lee, C.-L. ; Wang, J.-M. ; Peng, J.-G. ; Wang, W.C. ; Tsai, J.H. ; Liu, D.
Author_Institution :
Electron. Res. & Service Organ., Ind. Technol. Res. Inst., Hsinchu, Taiwan
Abstract :
A linear relationship between the level of field emission current and adjacent vacuum environment is experimentally observed over a wide range of vacuum condition. A gated-field-emission triode with its emitter tip apex above the gate electrode can survive under much worse vacuum environments and make the measurements possible. Improved transconductance is also reported with such a robust structure
Keywords :
triodes; vacuum microelectronics; field emission current; gated-field-emission triode; robust structure; transconductance; vacuum environment; Apertures; Dielectric substrates; Electrodes; Etching; Industrial electronics; Robustness; Testing; Transconductance; Vacuum technology; Voltage;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.499223
