[Copyright notice]

fYear

2009

Firstpage

1

Lastpage

1

Abstract

The following topics are dealt with: CMOS junctions, annealing, metrology, CMOS devices, semiconductor device modelling and simulation, PRAM, RRAM, Fermi level pinning, NexFET, power semiconductor devices, displays, sensors, MEMS, TFTs, solid-state and nanoelectronic devices, graphene, FinFET, nanowire devices, thin film circuits, ESD, reliability, HEMT, MOSFET, CMOS process modelling and simulation, carbon nanotube transistors, medical electronics and bioelectronics, stackable cross point phase change memory, SoC, random telegraph noise, microresonators, flash memory, quantum well field effect transistors, interconnections, and solid electrolyte switches.

Keywords

CMOS integrated circuits; Fermi level; MOSFET; annealing; biomedical electronics; carbon nanotubes; flash memories; graphene; high electron mobility transistors; integrated circuit interconnections; micromechanical resonators; nanoelectronics; phase change memories; power semiconductor devices; quantum well devices; random noise; semiconductor device models; semiconductor device reliability; semiconductor process modelling; solid electrolytes; switches; system-on-chip; thin film circuits; thin film transistors; CMOS devices; CMOS junctions; CMOS process modelling; CMOS process simulation; ESD; Fermi level pinning; FinFET; HEMT; MEMS; MOSFET; NexFET; PRAM; RRAM; SoC; TFTs; annealing; bioelectronics; carbon nanotube transistors; displays; flash memory; graphene; interconnections; medical electronics; microresonators; nanoelectronic devices; nanowire devices; power semiconductor devices; quantum well field effect transistors; random telegraph noise; reliability; semiconductor device modelling; semiconductor device simulation; sensors; solid electrolyte switches; solid-state devices; stackable cross point phase change memory; thin film circuits; thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2009 IEEE International

Conference_Location

Baltimore, MD

Print_ISBN

978-1-4244-5639-0

Electronic_ISBN

978-1-4244-5640-6

Type

conf

DOI

10.1109/IEDM.2009.5424436

Filename

5424436