DocumentCode :
165482
Title :
Effects of HNO3 molecular doping in graphene/Si Schottky barrier solar cells
Author :
Lancellotti, L. ; Bobeico, E. ; Capasso, Andrea ; Della Noce, M. ; Dikonimos, Theodoros ; Lisi, Nicola ; Delli Veneri, Paola
Author_Institution :
UTTP-MDB, Mater. & devices, ENEA-Portici Res. Center, Rome, Italy
fYear :
2014
fDate :
12-14 May 2014
Firstpage :
1
Lastpage :
3
Abstract :
Schottky barrier solar cells based on graphene/n-silicon heterojunction have been fabricated and characterized and the effect of graphene molecular doping by HNO3 on the solar cells performances have been analyzed. Different doping conditions and thermal annealing processes have been tested to asses and optimize the stability of the devices. The PCE of the cells increases after the treatment by HNO3 and reaches 5% in devices treated at 200 °C immediately before the exposition to the oxidant. Up to now our devices retain about 80% of efficiency over a period of two weeks, which represents a good stability result for similar devices.
Keywords :
Schottky diodes; annealing; doping; elemental semiconductors; graphene; hydrogen compounds; silicon; solar cells; C:HNO3-Si; device stability; graphene-Si Schottky barrier solar cells; molecular doping; oxidants; temperature 200 degC; thermal annealing; Aging; Annealing; Doping; Graphene; Silicon; Schottky barrier; chemical doping; graphene; solar cell;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics Technologies, 2014 Fotonica AEIT Italian Conference on
Conference_Location :
Naples
Print_ISBN :
978-8-8872-3718-4
Type :
conf
DOI :
10.1109/Fotonica.2014.6843898
Filename :
6843898
Link To Document :
بازگشت