Title :
Investigation of inner surface of silicon microchannels fabricated by electrochemical method
Author :
Ci, Pengliang ; Shi, Jing ; Sun, Li ; Liu, Tao ; Wang, Lianwei ; Chu, Paul K.
Author_Institution :
Dept. of Electron. Eng., East China Normal Univ., Shanghai, China
Abstract :
Various silicon-based microchannels with different internal surface morphology is investigated to grow CNTs (carbon nanotubes) on the surface of the pore wall which may enhance the electron emission. The morphology of the samples prepared under different conditions is determined by scanning electron microscopy (SEM). Parameters such as temperature, concentration of hydrofluoric acid, potential, current density, and so on are found to affect the inner surface of the pore wall.
Keywords :
carbon nanotubes; current density; electrochemistry; elemental semiconductors; micromechanical devices; porous semiconductors; scanning electron microscopy; silicon; surface morphology; C; Si; carbon nanotubes; current density; electrochemical method; electron emission; hydrofluoric acid; internal surface morphology; pore wall; scanning electron microscopy; silicon microchannel inner surface; Carbon nanotubes; Current density; Etching; Hafnium; Microchannel; Scanning electron microscopy; Shape control; Silicon; Surface morphology; Temperature;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5424440
