Title :
A high performance 0.1 μm MOSFET with asymmetric channel profile
Author :
Hiroki, Akira ; Odanaka, Shinji ; Hori, Atsushi
Author_Institution :
Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Moriguchi, Japan
Abstract :
This paper describes nonequilibrium transport phenomenon, practical fabrication process, and potential design of an asymmetric 0.1 μm n-MOSFET for the first time. The self-consistent Monte Carlo device simulation coupled with a process simulator reveals the carrier velocity overshoot at the source side of the channel. It is found that the 0.1 μm MOSFET with asymmetric channel profile realizes high device performance due to the high carrier velocity
Keywords :
CMOS integrated circuits; MOSFET; Monte Carlo methods; doping profiles; ion implantation; 0.1 micron; Monte Carlo device simulation; asymmetric channel profile; carrier velocity overshoot; fabrication process; high performance NMOSFET; n-MOSFET; n-channel MOSFET; nonequilibrium transport phenomenon; Boron; Electrodes; Equations; Fabrication; Impurities; MOSFET circuits; Monte Carlo methods; Surface resistance; Threshold voltage; Transconductance;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.499233
