DocumentCode :
1655123
Title :
Completely planarized W plugs using MnO2 CMP
Author :
Kishii, Sadahiro ; Suzuki, Rintaro ; Ohishi, Akiyoshi ; Arimoto, Yoshihiro
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
fYear :
1995
Firstpage :
465
Lastpage :
468
Abstract :
In tungsten (W) polishing, MnO2 has been used as an abrasive to form plugs without etching holes in seams during CMP. We found that MnO2 polishes 1.5 times faster than the standard Al2O3 abrasive, and can be completely removed during the cleaning process
Keywords :
abrasion; integrated circuit metallisation; manganese compounds; polishing; surface cleaning; tungsten; MnO2; MnO2 CMP; MnO2 slurry; W; W plug planarization; W polishing; abrasive; chemical mechanical polishing; cleaning process; Abrasives; Cleaning; Contamination; Etching; Hafnium; Plugs; Scanning electron microscopy; Slurries; Tin; Tungsten;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
ISSN :
0163-1918
Print_ISBN :
0-7803-2700-4
Type :
conf
DOI :
10.1109/IEDM.1995.499239
Filename :
499239
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1655123
بازگشت