• DocumentCode
    1655123
  • Title

    Completely planarized W plugs using MnO2 CMP

  • Author

    Kishii, Sadahiro ; Suzuki, Rintaro ; Ohishi, Akiyoshi ; Arimoto, Yoshihiro

  • Author_Institution
    Fujitsu Labs. Ltd., Atsugi, Japan
  • fYear
    1995
  • Firstpage
    465
  • Lastpage
    468
  • Abstract
    In tungsten (W) polishing, MnO2 has been used as an abrasive to form plugs without etching holes in seams during CMP. We found that MnO2 polishes 1.5 times faster than the standard Al2O3 abrasive, and can be completely removed during the cleaning process
  • Keywords
    abrasion; integrated circuit metallisation; manganese compounds; polishing; surface cleaning; tungsten; MnO2; MnO2 CMP; MnO2 slurry; W; W plug planarization; W polishing; abrasive; chemical mechanical polishing; cleaning process; Abrasives; Cleaning; Contamination; Etching; Hafnium; Plugs; Scanning electron microscopy; Slurries; Tin; Tungsten;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1995. IEDM '95., International
  • Conference_Location
    Washington, DC
  • ISSN
    0163-1918
  • Print_ISBN
    0-7803-2700-4
  • Type

    conf

  • DOI
    10.1109/IEDM.1995.499239
  • Filename
    499239
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1655123