Screw dislocation driven nanowire growth and its potential applications

Author

Jin, Song

Author_Institution

Dept. of Chem., Univ. of Wisconsin-Madison, Madison, WI, USA

fYear

2010

Firstpage

38

Lastpage

39

Abstract

A new nanowire formation mechanism that is different from the well-known metal catalyzed vapor-liquid-solid (VLS) mechanism is discussed. Axial screw dislocations provide the self-perpetuating steps to enable 1-dimensional crystal growth, which is first manifested in hierarchical nanostructures of lead sulfide (PbS) nanowires resembling "pine trees" that are synthesized via chemical vapor deposition. The complex hierarchical nanostructures have advantages in solar energy harvesting and conversion, and nanoelectronics.

Keywords

IV-VI semiconductors; energy harvesting; lead compounds; nanoelectronics; nanowires; screw dislocations; semiconductor growth; semiconductor quantum wires; solar energy conversion; 1-dimensional crystal growth; PbS; axial screw dislocations; chemical vapor deposition; complex hierarchical nanostructures; lead sulfide nanowires; nanoelectronics; nanowire formation mechanism; pine trees structure; screw dislocation driven nanowire growth; self-perpetuating steps; solar energy conversion; solar energy harvesting; well-known metal catalyzed vapor-liquid-solid mechanism; Chemical vapor deposition; Fasteners; Hydrogen; Lead compounds; Nanobioscience; Nanomaterials; Nanostructured materials; Nanostructures; Silicon; Solar energy;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2010 3rd International

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-3543-2

Electronic_ISBN

978-1-4244-3544-9

Type

conf

DOI

10.1109/INEC.2010.5424450

Filename

5424450