DocumentCode :
1655156
Title :
Screw dislocation driven nanowire growth and its potential applications
Author :
Jin, Song
Author_Institution :
Dept. of Chem., Univ. of Wisconsin-Madison, Madison, WI, USA
fYear :
2010
Firstpage :
38
Lastpage :
39
Abstract :
A new nanowire formation mechanism that is different from the well-known metal catalyzed vapor-liquid-solid (VLS) mechanism is discussed. Axial screw dislocations provide the self-perpetuating steps to enable 1-dimensional crystal growth, which is first manifested in hierarchical nanostructures of lead sulfide (PbS) nanowires resembling "pine trees" that are synthesized via chemical vapor deposition. The complex hierarchical nanostructures have advantages in solar energy harvesting and conversion, and nanoelectronics.
Keywords :
IV-VI semiconductors; energy harvesting; lead compounds; nanoelectronics; nanowires; screw dislocations; semiconductor growth; semiconductor quantum wires; solar energy conversion; 1-dimensional crystal growth; PbS; axial screw dislocations; chemical vapor deposition; complex hierarchical nanostructures; lead sulfide nanowires; nanoelectronics; nanowire formation mechanism; pine trees structure; screw dislocation driven nanowire growth; self-perpetuating steps; solar energy conversion; solar energy harvesting; well-known metal catalyzed vapor-liquid-solid mechanism; Chemical vapor deposition; Fasteners; Hydrogen; Lead compounds; Nanobioscience; Nanomaterials; Nanostructured materials; Nanostructures; Silicon; Solar energy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
Type :
conf
DOI :
10.1109/INEC.2010.5424450
Filename :
5424450
Link To Document :
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