Ion beam doping of semiconductor nanowires

Author

Borschel, C. ; Niepelt, R. ; Geburt, S. ; Ronning, C.

Author_Institution

Inst. for Solid State Phys., Univ. of Jena, Germany

fYear

2010

Firstpage

40

Lastpage

41

Abstract

Semiconductor nanowires are of major importance within the area of nanotechnology, and are usually synthesized using the so-called vapor-liquid-solid mechanism. Controlled doping, a necessary issue in order to realize devices, is an unsolved problem and an extremely difficult task if using such a growth mechanism. We use an alternative route for modifying the electrical, optical and magnetic properties of semiconductor nanowires: ion implantation. Several independent studies on ion beam doping of semiconductor nanowires will be presented.

Keywords

II-VI semiconductors; elemental semiconductors; ion implantation; manganese; nanowires; semiconductor doping; semiconductor quantum wires; silicon; thulium; zinc compounds; Si; ZnO:Tm; ZnS:Mn; electrical property; ion beam doping; ion implantation; magnetic property; optical property; semiconductor nanowires; vapor-liquid-solid mechanism; Annealing; Ion beams; Ion implantation; Iron alloys; Luminescence; Magnetic properties; Nanowires; Semiconductor device doping; Solids; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2010 3rd International

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-3543-2

Electronic_ISBN

978-1-4244-3544-9

Type

conf

DOI

10.1109/INEC.2010.5424451

Filename

5424451