• DocumentCode
    165537
  • Title

    Synthesis of silicon nanowires by metal-catalyst-free process

  • Author

    Ishiyama, Tomoaki ; Morishima, Satoru ; Ishii, Y. ; Fukuda, Motohisa

  • Author_Institution
    Dept. of Electr. & Electron. Inf. Eng., Toyohashi Univ. of Technol., Toyohashi, Japan
  • fYear
    2014
  • fDate
    18-21 Aug. 2014
  • Firstpage
    466
  • Lastpage
    469
  • Abstract
    The synthesis of single-crystal silicon (Si) nanowires by a metal-catalyst-free vapor-liquid-solid (VLS) process was studied. Silicon nanowires have been successfully synthesized by simple thermal treatment without any metal catalyst. For cases without metal catalysts, Si nanowires are grown by VLS processes assisted by sulfur. It is thought that single-crystal Si nanowires are grown by a VLS process in which the silicon sulfides produced by a reaction between Si and sulfur act as both molten eutectic alloy droplets and the source gases for nanowire growth. Si nanowires were synthesized by the sulfur-assisted thermal chemical vapor transport process without the using of any metal catalyst.
  • Keywords
    chemical reactions; chemical vapour deposition; drops; elemental semiconductors; heat treatment; nanofabrication; nanowires; semiconductor growth; silicon; Si; metal-catalyst-free vapor-liquid-solid process; molten eutectic alloy droplet; silicon sulfide; single-crystal silicon nanowire; sulfur-assisted thermal chemical vapor transport process; thermal treatment; Furnaces; Gold; Nanowires; Scanning electron microscopy; Silicon; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology (IEEE-NANO), 2014 IEEE 14th International Conference on
  • Conference_Location
    Toronto, ON
  • Type

    conf

  • DOI
    10.1109/NANO.2014.6968013
  • Filename
    6968013