Title :
Si/SiGe high-speed field-effect transistors
Author_Institution :
Dept. of Electron., Cairo Univ., Giza, Egypt
Abstract :
We review the current status of Si/SiGe n- and p-type MODFETs with an emphasis on their microwave performance. A comparison with state-of-the-art Si technology is given, and the potential use of Si/SiGe devices in complementary logic is pointed out
Keywords :
CMOS integrated circuits; Ge-Si alloys; elemental semiconductors; high electron mobility transistors; microwave field effect transistors; silicon; Si-SiGe; Si/SiGe CMOS; Si/SiGe high-speed field-effect transistors; complementary logic; microwave performance; n-type MODFETs; p-type MODFETs; CMOS technology; Electron mobility; Epitaxial layers; FETs; Germanium silicon alloys; HEMTs; Logic devices; MODFETs; Microwave devices; Silicon germanium;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.499249
