• DocumentCode
    1655405
  • Title

    Si/SiGe high-speed field-effect transistors

  • Author

    Ismail, K.

  • Author_Institution
    Dept. of Electron., Cairo Univ., Giza, Egypt
  • fYear
    1995
  • Firstpage
    509
  • Lastpage
    512
  • Abstract
    We review the current status of Si/SiGe n- and p-type MODFETs with an emphasis on their microwave performance. A comparison with state-of-the-art Si technology is given, and the potential use of Si/SiGe devices in complementary logic is pointed out
  • Keywords
    CMOS integrated circuits; Ge-Si alloys; elemental semiconductors; high electron mobility transistors; microwave field effect transistors; silicon; Si-SiGe; Si/SiGe CMOS; Si/SiGe high-speed field-effect transistors; complementary logic; microwave performance; n-type MODFETs; p-type MODFETs; CMOS technology; Electron mobility; Epitaxial layers; FETs; Germanium silicon alloys; HEMTs; Logic devices; MODFETs; Microwave devices; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1995. IEDM '95., International
  • Conference_Location
    Washington, DC
  • ISSN
    0163-1918
  • Print_ISBN
    0-7803-2700-4
  • Type

    conf

  • DOI
    10.1109/IEDM.1995.499249
  • Filename
    499249
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1655405