• DocumentCode
    1655440
  • Title

    A novel poly-silicon-capped poly-silicon-germanium thin-film transistor

  • Author

    Tang, Andrew J. ; Tsai, Julie A. ; Reif, Rafael ; King, Tsu-Jae

  • Author_Institution
    Microsystems Technol. Lab., MIT, Cambridge, MA, USA
  • fYear
    1995
  • Firstpage
    513
  • Lastpage
    516
  • Abstract
    Poly-silicon-capped (poly-Si-capped) polysilicon-germanium (poly-Si1-xGex) thin-film transistors (TFTs) have been designed and fabricated with the aim to improve performance of load devices in high-density mega-bit SRAM cells. Poly-Si-capped poly-Si1-xGex TFTs utilize the excellent interface between oxide and poly-Si interface as well as the higher mobilities of poly-Si1-xGex. P-channel poly-Si-capped poly-Si 1-xGex TFTs show superior device results compared to similarly-processed poly-Si TFTs
  • Keywords
    Ge-Si alloys; SRAM chips; carrier mobility; leakage currents; plasma CVD; semiconductor growth; semiconductor materials; thin film transistors; SiO2-Si-SiGe; carrier mobilities; high-density mega-bit SRAM cells; leakage current; load devices; on-current; plasma enhanced very low pressure CVD; poly-Si1-xGex TFTs; poly-silicon-germanium thin-film transistor; polysilicon capping; polysilicon-oxide interface; Amorphous materials; Chemical vapor deposition; Intrusion detection; Laboratories; Leakage current; Plasma temperature; Random access memory; SRAM chips; Substrates; Thin film transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1995. IEDM '95., International
  • Conference_Location
    Washington, DC
  • ISSN
    0163-1918
  • Print_ISBN
    0-7803-2700-4
  • Type

    conf

  • DOI
    10.1109/IEDM.1995.499250
  • Filename
    499250
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1655440