Title :
A novel poly-silicon-capped poly-silicon-germanium thin-film transistor
Author :
Tang, Andrew J. ; Tsai, Julie A. ; Reif, Rafael ; King, Tsu-Jae
Author_Institution :
Microsystems Technol. Lab., MIT, Cambridge, MA, USA
Abstract :
Poly-silicon-capped (poly-Si-capped) polysilicon-germanium (poly-Si1-xGex) thin-film transistors (TFTs) have been designed and fabricated with the aim to improve performance of load devices in high-density mega-bit SRAM cells. Poly-Si-capped poly-Si1-xGex TFTs utilize the excellent interface between oxide and poly-Si interface as well as the higher mobilities of poly-Si1-xGex. P-channel poly-Si-capped poly-Si 1-xGex TFTs show superior device results compared to similarly-processed poly-Si TFTs
Keywords :
Ge-Si alloys; SRAM chips; carrier mobility; leakage currents; plasma CVD; semiconductor growth; semiconductor materials; thin film transistors; SiO2-Si-SiGe; carrier mobilities; high-density mega-bit SRAM cells; leakage current; load devices; on-current; plasma enhanced very low pressure CVD; poly-Si1-xGex TFTs; poly-silicon-germanium thin-film transistor; polysilicon capping; polysilicon-oxide interface; Amorphous materials; Chemical vapor deposition; Intrusion detection; Laboratories; Leakage current; Plasma temperature; Random access memory; SRAM chips; Substrates; Thin film transistors;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.499250
