Title :
Enhanced hole mobilities in surface-channel strained-Si p-MOSFETs
Author :
Rim, K. ; Welser, J. ; Hoyt, J.L. ; Gibbons, J.F.
Author_Institution :
Solid State Electron. Lab., Stanford Univ., CA, USA
Abstract :
The strain dependence of the hole mobility in surface-channel p-MOSFETs employing pseudomorphic, strained-Si layers is reported for the first time. The hole mobility enhancement is observed to increase roughly linearly with the strain as the Ge content in the relaxed Si1-xGex buffer layer increases. When compared to the device with x=0.1, the devices with x=0.22 and 0.29 exhibit hole mobility enhancement factors of 1.4 and 1.8, respectively. In spite of the high fixed charge in our gate oxides, the device with Ge content x=0.29 still exhibits a mobility 1.3 times that of bulk Si MOSFETs with state-of-the-art oxides. The first measurements of the transconductance enhancements in submicron strained-Si p-MOSFETs are also reported
Keywords :
MOSFET; capacitance; hole mobility; stress relaxation; Si-SiGe; gate oxide fixed charge; hole mobility enhancement; pseudomorphic strained-Si layers; relaxed Si1-xGex buffer layer; split C-V measurement; strain dependence; submicron strained-Si p-MOSFET; surface-channel p-MOSFETs; transconductance enhancements; Buffer layers; Capacitive sensors; Effective mass; Epitaxial layers; Extraterrestrial measurements; MOSFET circuits; Raman scattering; Solid state circuits; Strain measurement; Transconductance;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.499251
