Title :
Proceedings of 4th International Conference on Solid-State and IC Technology
Abstract :
The following topics were dealt with: metallization; nanostructure technologies; thin oxides; circuit design; memories; optoelectronic devices; device processes; silicon-on-insulator; dielectrics and thin films; modelling; ULSI and related technologies; CAD; compound semiconductors; reliability; SiGe technology; micromechanics and solid-state technology; defects and contaminants; chip architecture; amorphous silicon; physical analysis; bipolar and BiCMOS
Keywords :
BiCMOS integrated circuits; VLSI; bipolar integrated circuits; circuit CAD; dielectric thin films; integrated circuit design; integrated circuit metallisation; integrated circuit reliability; integrated circuit technology; integrated memory circuits; micromechanical devices; nanotechnology; optoelectronic devices; semiconductor device metallisation; semiconductor device models; semiconductor device reliability; semiconductor process modelling; semiconductor technology; semiconductors; silicon-on-insulator; BiCMOS technology; IC technology; VLSI; bipolar technology; circuit design; device processes; memories; metallization; nanostructure technologies; optoelectronic devices; thin oxides;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing, China
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.499257
