DocumentCode :
1655673
Title :
Chemical vapor deposited tungsten interconnect technology
Author :
Maeda, M. ; Wanger, R.C.E. ; Kiyohara, Y.
Author_Institution :
Texas Instrum. Japan Ltd., Ibaraki, Japan
fYear :
1995
Firstpage :
21
Lastpage :
28
Abstract :
A `composite´ chemical vapor deposited tungsten process was developed for interconnect application. This film demonstrated stress levels <550 MPa tensile, whilst maintaining acceptable fill properties. It was found that the SiH4 initiation step (no WF 6 flowing) was critical for the control of Si consumption and junction leakage, and that a higher (40 Torr) process pressure provided substantial benefits as compared to initiation steps performed at lower pressures (4 Torr). The addition of relatively low N2 partial pressures to the process gas mixture greatly reduced the surface roughness of the CVD-W film, with no detrimental effect on other film properties
Keywords :
VLSI; chemical vapour deposition; integrated circuit interconnections; leakage currents; surface topography; tungsten; 40 torr; W; composite chemical vapor deposition; fill properties; interconnect application; junction leakage; process gas mixture; process pressure; stress levels; surface roughness; Chemical technology; Electrical resistance measurement; Integrated circuit interconnections; Optical films; Rough surfaces; Stress; Surface roughness; Testing; Tungsten; Wavelength measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
Type :
conf
DOI :
10.1109/ICSICT.1995.499261
Filename :
499261
Link To Document :
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