Title :
Epitaxial growth of CoSi2 by Co/Ti/Si solid phase reaction and its application in salicide technology
Author :
Li, Bing-Zong ; Wu, Wei-Jun ; Shao, Kai ; Fang, Hua ; Gu, Zhi-Guang ; Jiang, Guo-Bao ; Huang, Wei-Ning
Author_Institution :
Dept. of Electron. Eng., Fudan Univ., Shanghai, China
Abstract :
Co/Ti/Si ternary solid phase interaction is a new method of CoSi 2/Si hetero-epitaxy. The experimental results on Co/Ti/Si solid state interaction behavior, epitaxial growth of CoSi2 on Si substrate, self-aligned silicidation of source/drain contact and polysilicon gate by Co/Ti/Si solid phase reaction, and applications of the new salicide technology in device fabrication are described and discussed
Keywords :
ULSI; VLSI; cobalt compounds; integrated circuit interconnections; integrated circuit metallisation; solid phase epitaxial growth; CoSi2-Si; Si; device fabrication; heteroepitaxial growth; polysilicon gate; salicide technology; self-aligned silicidation; solid phase reaction; solid state interaction; source/drain contact; CMOS technology; Conductivity; Epitaxial growth; Fabrication; Molecular beam epitaxial growth; Semiconductor films; Silicidation; Silicides; Solid state circuits; Substrates;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.499262
