Origin of light emission from silicon nanoparticles

Author

Zhan, Dahua ; Milewski, P.D. ; Lichtenwalner, D.J. ; Kolbas, R.M. ; Kingon, A.L. ; Zavada, J.M.

Author_Institution

North Carolina State Univ., Raleigh, NC, USA

fYear

1995

Firstpage

54

Lastpage

56

Abstract

Light emission characteristics from silicon nanoparticles consisting of a crystalline core encased in an amorphous oxide shell are reported. The particles were thermally oxidized to further reduce the silicon core dimensions. Photoluminescence measurements reveal substantial difference in emission intensities and peak wavelengths under low and high excitation levels. The results indicate that at least two mechanisms contribute to the light emission from Si nanoparticles, one associated with quantum size effects, and another possibly related to surface defects

Keywords

elemental semiconductors; oxidation; photoluminescence; silicon; surface states; 6 nm; Si nanoparticles; Si-SiO₂; amorphous oxide shell; crystalline core; emission intensities; high excitation levels; light emission characteristics; low excitation levels; peak wavelengths; photoluminescence measurements; quantum size effects; surface defects; thermally oxidized particles; Amorphous materials; Argon; Crystallization; Microelectronics; Nanoparticles; Photoluminescence; Plasma temperature; Silicon; Size measurement; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 1995 4th International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-3062-5

Type

conf

DOI

10.1109/ICSICT.1995.499269

Filename

499269