DocumentCode
1655942
Title
High sensitivity porous silicon photodetector
Author
Lee, Ming-Kwei ; Tseng, Yu-Chu ; Chu, Chi-Hsing
Author_Institution
Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
fYear
1995
Firstpage
57
Lastpage
59
Abstract
In this work, a high sensitivity porous silicon photodetector through rapid thermal oxidation has been studied. The photoresponse is 0.85 mA/mW at reverse-biased 10 V under tungsten lamp illumination with power 21.5 mW
Keywords
avalanche breakdown; elemental semiconductors; oxidation; photodetectors; porous materials; rapid thermal processing; sensitivity; silicon; 10 V; 21.5 mW; Si; avalanche effect; high sensitivity photodetector; photoresponse; porous Si photodetector; rapid thermal oxidation; reverse-biased operation; tungsten lamp illumination; Dark current; Electric breakdown; Lamps; Lighting; Oxidation; Photodetectors; Power engineering and energy; Silicon; Tungsten; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-3062-5
Type
conf
DOI
10.1109/ICSICT.1995.499270
Filename
499270
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