DocumentCode
1655961
Title
X-ray diffraction study of hydrogen complexes in hydrogenated nanocrystalline silicon
Author
Yun, Feng ; Wana, Y. ; Liao, X.B.
Author_Institution
Xi´´an Inst. of Opt. & Precision Mech., Acad. Sinica, China
fYear
1995
Firstpage
60
Lastpage
62
Abstract
This paper presents X-ray diffraction results on hydrogenated nanocrystalline silicon films showing a new diffraction feature at 2θ=33.6°, which is supposed to be an identifying signature of the atomic relaxation of hydrogenated Si(111) surface of nano-crystallites
Keywords
X-ray diffraction; elemental semiconductors; hydrogen; nanostructured materials; plasma CVD coatings; semiconductor thin films; silicon; Si(111); Si:H; X-ray diffraction; atomic relaxation; hydrogen complexes; hydrogenated nanocrystalline silicon; semiconductor; thin films; Amorphous materials; Crystallization; Hydrogen; Optical diffraction; Optical films; Plasma temperature; Silicon; Substrates; X-ray diffraction; X-ray scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-3062-5
Type
conf
DOI
10.1109/ICSICT.1995.499271
Filename
499271
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