Title :
SPICE model for the single electron tunnel junction
Author :
van de Haar, R. ; Klunder, Roelof H. ; Hoekstra, Jaap
Author_Institution :
Dept. of Electr. Eng., Delft Univ. of Technol., Netherlands
fDate :
6/23/1905 12:00:00 AM
Abstract :
In this paper a SPICE model for a single electron tunnel junction is given. The model is derived from a new formulation of the tunnel condition based on voltages over the tunnel junctions. To validate the model an electron box is simulated
Keywords :
SPICE; semiconductor device models; single electron transistors; tunnelling; SET device; SET-model; SPICE model; electron box simulation; single electron tunnel junction; Charge transfer; Circuit simulation; Electronic mail; Electrons; Integrated circuit modeling; Nanoelectronics; Nanoscale devices; SPICE; Tunneling; Voltage;
Conference_Titel :
Electronics, Circuits and Systems, 2001. ICECS 2001. The 8th IEEE International Conference on
Print_ISBN :
0-7803-7057-0
DOI :
10.1109/ICECS.2001.957487
