Title :
Study of the photovoltage and adsorption properties of tin oxide/porous silicon/silicon
Author :
Shen, Qihua ; Zhu, Wenzhang ; Wang, Yujiang ; Wu, Suntao ; Cai, Yushuang
Author_Institution :
Dept. of Phys., Xiamen Univ., China
Abstract :
The photovoltage spectra and the adsorption properties of tin oxide/porous silicon/silicon (SnO2/PS/Si) have been studied. The photovoltage spectra show that there exist two heterojunctions in SnO2/PS/Si structure. The photovoltage evidently decreased when the sample adsorbed reducing gas. The experimental results indicate that SnO2/PS/Si is a good material for gas sensor and photovoltage is a sensitive parameter for detecting reducing gas
Keywords :
elemental semiconductors; gas sensors; photovoltaic effects; semiconductor heterojunctions; silicon; tin compounds; SnO2-Si-Si; adsorption properties; gas sensor; heterojunctions; photovoltage; reducing gas; sensitive parameter; Absorption; Chemical vapor deposition; Conductivity; Etching; Heterojunctions; Photonic band gap; Physics; Silicon; Tin; Wavelength measurement;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.499274
