Title :
Recent developments in N2O/NO-based ultra thin oxynitride gate dielectrics for CMOS ULSI applications
Author :
Han, L.K. ; Bhat, M. ; Wristers, D. ; Wang, H.H. ; Kwong, D.L.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
Abstract :
This paper reviews recent developments in N2O- and NO-based oxynitride gate dielectrics for CMOS ULSI applications. These dielectrics are extremely attractive due to their process simplicity, thickness controllability, and excellent electrical characteristics. In this paper, several issues like thickness scaling, growth kinetics, chemical composition, electrical properties, hot-carrier reliability, and EEPROM applications of these dielectrics are discussed
Keywords :
CMOS memory circuits; EPROM; MOSFET; ULSI; dielectric thin films; hot carriers; integrated circuit reliability; nitridation; silicon compounds; thickness control; CMOS ULSI; EEPROM applications; N2O; N2O-based oxynitride gate dielectrics; NO; NO-based oxynitride gate dielectrics; Si-SiON; SiOxNy gate dielectrics; chemical composition; electrical characteristics; growth kinetics; hot-carrier reliability; process simplicity; thickness controllability; thickness scaling; ultra thin oxynitride gate dielectrics; Application software; Boron; Capacitive sensors; Degradation; Design for quality; Dielectrics; Kinetic theory; Oxidation; Silicon; Ultra large scale integration;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.499277
