DocumentCode :
1656095
Title :
Performance of TFR filters under elevated power conditions
Author :
Ketcham, R.S. ; Kline, G.R. ; Lakin, K.M.
Author_Institution :
Microelectron. Res. Center, Iowa State Univ., Ames, IA, USA
fYear :
1988
Firstpage :
106
Lastpage :
111
Abstract :
Research into the application of thin-film piezoelectric resonator (TFR) technology in novel monolithic bandpass filtering devices is reported. Research into the performance of TFR-based filters under elevated power levels was initiated to assess the suitability of this technology in systems requiring ultraminiature transmit and transceiver functions. Characteristics of particular interest include the 1-dB compression point and the two-tone third-order intercept point. The results of research conducted on silicon-based TFR bandpass filter devices under elevated power conditions are presented
Keywords :
band-pass filters; crystal resonators; 1-dB compression point; TFR filters; crystal resonator; monolithic bandpass filtering devices; thin-film piezoelectric resonator; transceiver; two-tone third-order intercept point; Band pass filters; Channel bank filters; Electrodes; Filter bank; Network synthesis; Piezoelectric films; Power filters; Resonator filters; Silicon; Thermal conductivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Frequency Control Symposium, 1988., Proceedings of the 42nd Annual
Conference_Location :
Baltimore, MD
Type :
conf
DOI :
10.1109/FREQ.1988.27590
Filename :
27590
Link To Document :
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