DocumentCode
1656174
Title
On-state reliability of amorphous silicon antifuses
Author
Zhang, G. ; King, Y. ; Elfoukhy, S. ; Hamdy, E. ; Jing, T. ; Yu, P. ; Hu, C.
Author_Institution
Dept. of Phys., California Univ., Berkeley, CA, USA
fYear
1995
Firstpage
551
Lastpage
554
Abstract
A unified model of the on-state reliability of a-Si antifuses is presented. This physical model accounts for both thermal activation and electromigration. Temperature at the conductive link is the temperature at which the antifuse is stressed and is controlled by the stress current, not the ambient. To ensure a 10 year lifetime, a-Si antifuses should be operated at a current value less than 60% of its programming current value
Keywords
amorphous semiconductors; electric fuses; electromigration; elemental semiconductors; failure analysis; field programmable gate arrays; metal-semiconductor-metal structures; semiconductor device models; semiconductor device reliability; silicon; 10 year; FPGA; MSM type; Si; amorphous Si antifuses; conductive link; electromigration; on-state reliability; physical model; stress current; thermal activation; unified model; Amorphous silicon; Circuits; Current density; Electromigration; Failure analysis; Laboratories; Physics; Stress control; Temperature; Thermal stresses;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location
Washington, DC
ISSN
0163-1918
Print_ISBN
0-7803-2700-4
Type
conf
DOI
10.1109/IEDM.1995.499281
Filename
499281
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