DocumentCode :
1656178
Title :
Determination of metals impurity concentrations in semiconductor gases
Author :
Wong, Carol ; Amato, Anthony F. ; Brzychcy, Ann Marie
Author_Institution :
Matheson Gas Products, Newark, CA, USA
fYear :
1994
Firstpage :
211
Lastpage :
214
Abstract :
Monitoring metals concentration in semiconductor gases requires a variety of sampling techniques. The chemical and physical nature of the matrix gas are what determine which method is most appropriate. Due to the non-homogeneity of metals concentrations in the gases and the lack of information corresponding to the exact chemical composition of each metal impurity present, the extraction efficiency of sampling methods is difficult to verify. Therefore, the sampling methods are designed to capture the majority of metals contaminants whether in solid or vapor form. The focus of this paper is to review the current sampling techniques and analytical methods applied to metals determination in semiconductor gases
Keywords :
impurities; analytical methods; contaminants; metals impurity concentrations; sampling techniques; semiconductor gases; Chemicals; Contamination; Data mining; Gases; Hydrogen; Monitoring; Sampling methods; Semiconductor impurities; Solids; Valves;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Manufacturing Conference and Workshop. 1994 IEEE/SEMI
Conference_Location :
Cambridge, MA
Print_ISBN :
0-7803-2053-0
Type :
conf
DOI :
10.1109/ASMC.1994.588250
Filename :
588250
Link To Document :
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