DocumentCode
165618
Title
Simplified method for the determination of the potential landscape in the transport simulation of graphene devices
Author
Marconcini, Paolo
Author_Institution
Dipt. di Ing. dell´Inf., Univ. di Pisa, Pisa, Italy
fYear
2014
fDate
18-21 Aug. 2014
Firstpage
318
Lastpage
323
Abstract
A method is described to approximately determine the potential in the channel of a graphene device as a function of the voltages applied to the gates, once the profile at a reference bias point is known. This technique, which avoids the self-consistent solution of the electrostatic and transport equations, is adopted to perform a simplified but fast simulation of some interesting graphene structures.
Keywords
electrostatics; graphene; electrostatic equations; graphene devices; potential landscape determination; reference bias point; transport equations; transport simulation; Cavity resonators; Electric potential; Electrostatics; Equations; Graphene; Logic gates; Mathematical model;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology (IEEE-NANO), 2014 IEEE 14th International Conference on
Conference_Location
Toronto, ON
Type
conf
DOI
10.1109/NANO.2014.6968057
Filename
6968057
Link To Document