DocumentCode
1656236
Title
On-chip metal wire grid polarizer for CMOS image sensor based on 65-nm technology
Author
Sasagawa, Kiyotaka ; Ando, Keisuke ; Matsuoka, Hitoshi ; Kobayashi, Takuma ; Noda, Toshihiko ; Tokuda, Takashi ; Ohta, Jun
Author_Institution
Grad. Sch. of Mater. Sci., Nara Inst. of Sci. & Technol., Nara, Japan
fYear
2012
Firstpage
1
Lastpage
2
Abstract
We demonstrate complementary metal-oxide-semiconductor (CMOS) image sensor pixels with on-chip polarizer fabricated by a standard 65-nm CMOS technology. The extinction ratio of 94 at a wavelength of 750 nm was achieved.
Keywords
CMOS image sensors; optical design techniques; optical polarisers; CMOS image sensor; extinction ratio; on-chip metal wire grid polarizer; size 65 nm; wavelength 750 nm; CMOS image sensors; CMOS integrated circuits; Extinction ratio; Metals; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-4673-1839-6
Type
conf
Filename
6325758
Link To Document