DocumentCode :
1656361
Title :
A 250-MHz, 32-bit quantum MOS correlator prototype
Author :
Kulkarni, Shriram ; Bhattacharya, Mayukh ; González, Alejandro E. ; Mazumder, Pinaki
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Volume :
3
fYear :
2001
fDate :
6/23/1905 12:00:00 AM
Firstpage :
1501
Abstract :
Simulation results of Quantum MOS circuits comprising resonant-tunneling diodes (RTDs) and MOSFETs indicate greater than twofold improvement in power-delay product over CMOS. However, the challenges of co-integrating RTDs and CMOS devices have not been completely overcome yet, leaving the testing of RTD-CMOS circuit ideas to be accomplished by either simulation, or by electrically connecting discrete RTDs to CMOS chips, or by grafting and bonding RTDs to CMOS chips via a complicated hybrid integration process. While research in RTD-CMOS co-integration is ongoing, we present a 250-MHz, 32-bit QMOS correlator prototype that uses only MOS devices to emulate RTDs
Keywords :
MOS logic circuits; correlators; large scale integration; negative resistance circuits; quantum interference devices; resonant tunnelling diodes; 250 MHz; 32 bit; LSI circuit; MOSFET; NDR logic; power-delay product; quantum MOS correlator; resonant tunneling diode; CMOS process; Circuit simulation; Circuit testing; Correlators; Diodes; Joining processes; MOSFETs; Prototypes; RLC circuits; Resonant tunneling devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics, Circuits and Systems, 2001. ICECS 2001. The 8th IEEE International Conference on
Print_ISBN :
0-7803-7057-0
Type :
conf
DOI :
10.1109/ICECS.2001.957499
Filename :
957499
Link To Document :
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