DocumentCode
1656419
Title
Fabricating ZnO nanowires-based humidity sensor via dielectrophoresis method
Author
Wang, Yun ; Yeow, John T W ; Yin, Yu-Tung ; Chen, Liang-Yih
Author_Institution
Dept. of Syst. Design Eng., Univ. of Waterloo, Waterloo, ON, Canada
fYear
2010
Firstpage
446
Lastpage
447
Abstract
In this study, ZnO nanowires based humidity sensors were manipulated by dielectrophoresis (DEP) method. ZnO nanowires were grown by hydrothermal method at low temperature (95°C) for 3-24 hr. From the manipulation, we can know that electrical field and vaporization rate of suspension solution will affect the alignment of ZnO nanowires seriously. In the humidity sensor test, the sensor´s resistance increases with increasing RH% level. It showed very high sensitivity, which can reach 450% when the RH% is 100%. The response at 0%-30% and 50%-100% RH% is almost linear. However, a strange observation is that, after increasing the RH% in steps to 100%, when decrease the RH% in steps to 0%. The dynamic response of the resistance to RH% change between extra dry air and saturated air is shown that the sensor can reach 90% of the total change in seconds.
Keywords
II-VI semiconductors; crystal growth from solution; electrophoresis; humidity sensors; nanofabrication; nanosensors; nanowires; wide band gap semiconductors; zinc compounds; ZnO; dielectrophoresis; electrical field; humidity sensor; hydrothermal growth; nanowires; temperature 95 degC; time 3 hr to 24 hr; vaporization rate; Assembly; Chemical sensors; Dielectrophoresis; Humidity; Nanowires; Scanning electron microscopy; Sensor phenomena and characterization; Substrates; Temperature sensors; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location
Hong Kong
Print_ISBN
978-1-4244-3543-2
Electronic_ISBN
978-1-4244-3544-9
Type
conf
DOI
10.1109/INEC.2010.5424506
Filename
5424506
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