A selective epitaxial SiGe/Si planar photodetector for Si-based OEICs

Author

Sugiyama, M. ; Morikawa, T. ; Tatsumi, T. ; Hashimoto, T. ; Tashiro, T.

Author_Institution

ULSI Device Dev. Lab., NEC Corp., Sagamihara, Japan

fYear

1995

Firstpage

583

Lastpage

586

Abstract

This paper reports, for the first time, a P-i-N SiGe/Si superlattice photodetector with a planar structure for Si-based OEICs (Opto-Electronic Integrated Circuits). To make the planar structure, a novel SiGe/Si selective epitaxial growth technology by a cold wall UHV (Ultra-High-Vacuum)/CVD is newly developed. The P-i-N planar SiGe/Si photodetector exhibits a high external quantum efficiency (η_ext) of 25%-29% with a low dark current of 0.5 pA/μm² and responds up to 10 Gbit/s at λ=0.98 μm

Keywords

Ge-Si alloys; dark conductivity; elemental semiconductors; integrated optoelectronics; optical receivers; photodetectors; semiconductor materials; semiconductor superlattices; silicon; vapour phase epitaxial growth; 0.98 micrometre; 10 Gbit/s; 25 to 29 percent; OEICs; SiGe-Si; cold wall UHV/CVD; dark current; external quantum efficiency; selective epitaxial growth technology; selective epitaxial material planar photodetector; superlattice photodetector; Absorption; Epitaxial growth; Germanium silicon alloys; Optical coupling; Optical fibers; Optoelectronic devices; PIN photodiodes; Photodetectors; Silicon germanium; Superlattices;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1995. IEDM '95., International

Conference_Location

Washington, DC

ISSN

0163-1918

Print_ISBN

0-7803-2700-4

Type

conf

DOI

10.1109/IEDM.1995.499289

Filename

499289