Title :
A Write-Optimized B-Tree Layer for NAND Flash Memory
Author :
Gong, Xiaona ; Chen, Shuyu ; Lin, Mingwei ; Liu, Haozhang
Author_Institution :
Sch. of Comput. Sci. & Technol., Chongqing Univ., Chongqing, China
Abstract :
For B-tree index structure which requires intensively fine-grained updates/modifications, directly implementing this index structure over flash memory could lead to a significant number of write operations. In this paper, a write-optimized B-tree layer is proposed called WOBF which works over FTL in the flash memory. It could not only reduce the number of write operations by buffering index units in the index buffer and handling them in a batch, but also eliminate the number of pages used to store the index units reflecting the modified node. The performance benefits are proven theoretically and validated empirically.
Keywords :
NAND circuits; flash memories; FTL; NAND flash memory; WOBF; buffering index units; write-optimized B-tree layer; Algorithm design and analysis; Buffer storage; Flash memory; Indexes; Memory management; Performance evaluation; Time factors;
Conference_Titel :
Wireless Communications, Networking and Mobile Computing (WiCOM), 2011 7th International Conference on
Conference_Location :
Wuhan
Print_ISBN :
978-1-4244-6250-6
DOI :
10.1109/wicom.2011.6040592