• DocumentCode
    1656509
  • Title

    Lateral backward diodes as strain sensors

  • Author

    Friedrich, A.P. ; Besse, P.A. ; Fullin, E. ; Popovic, R.S.

  • Author_Institution
    Microtechnol. Syst. Group, Swiss Federal Inst. of Technol., Lausanne, Switzerland
  • fYear
    1995
  • Firstpage
    597
  • Lastpage
    600
  • Abstract
    We present a new type of lateral backward silicon diode intended to be used as a strain sensor. The devices are fabricated using a close-to-conventional silicon technology. The diodes have a prevailing tunnelling current around zero bias. They exhibit a high strain sensitivity and a low temperature coefficient of opposite sign to that of conventional piezoresistors
  • Keywords
    elemental semiconductors; sensitivity; silicon; strain sensors; tunnel diodes; Si; lateral backward diodes; strain sensitivity; strain sensors; temperature coefficient; tunnelling current; zero bias; Capacitive sensors; Diodes; Doping; Fabrication; Piezoresistive devices; Silicon; Strain measurement; Temperature sensors; Tunneling; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1995. IEDM '95., International
  • Conference_Location
    Washington, DC
  • ISSN
    0163-1918
  • Print_ISBN
    0-7803-2700-4
  • Type

    conf

  • DOI
    10.1109/IEDM.1995.499292
  • Filename
    499292
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1656509