• DocumentCode
    1656557
  • Title

    High performance quartz

  • Author

    Laudise, R.A. ; Barns, R.L. ; Stevens, D.S. ; Simpson, E.E. ; Brown, H.

  • Author_Institution
    AT&T Bell Labs., Murray Hill, NJ, USA
  • fYear
    1988
  • Firstpage
    116
  • Lastpage
    126
  • Abstract
    Recent experiments in the laboratory and under factory conditions and a reassessment of the literature aimed at developing techniques for preparing high-performance quartz, especially r-bar quartz for SAWS, radiation hard quartz, and low-channel and low-dislocation-density material, are reported. The r-bar material is found to be preferable for SAW wafers because the wafer is cut parallel to the growing face, resulting in greater homogeneity and increased yield. Procedures for Al impurity reduction to improve radiation resistance are described. Procedures for using SiO2 glass with a very low Al content as nutrient are described. Etch channels are shown to be decorated dislocations, and measures which reduce dislocations (using dislocation free seeds, reducing particular inclusions, and minimizing seed-grown material lattice mismatch) are shown to be effective
  • Keywords
    quartz; surface acoustic wave devices; Al impurity; SAW wafers; SiO2 glass; decorated dislocations; inclusions; lattice mismatch; low-dislocation-density material; r-bar quartz; radiation hard quartz; Electrical resistance measurement; Etching; Glass; Impurities; Laboratories; Lattices; Particle measurements; Production facilities; Sawing machines; Surface acoustic waves;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Frequency Control Symposium, 1988., Proceedings of the 42nd Annual
  • Conference_Location
    Baltimore, MD
  • Type

    conf

  • DOI
    10.1109/FREQ.1988.27592
  • Filename
    27592