DocumentCode
1656557
Title
High performance quartz
Author
Laudise, R.A. ; Barns, R.L. ; Stevens, D.S. ; Simpson, E.E. ; Brown, H.
Author_Institution
AT&T Bell Labs., Murray Hill, NJ, USA
fYear
1988
Firstpage
116
Lastpage
126
Abstract
Recent experiments in the laboratory and under factory conditions and a reassessment of the literature aimed at developing techniques for preparing high-performance quartz, especially r -bar quartz for SAWS, radiation hard quartz, and low-channel and low-dislocation-density material, are reported. The r -bar material is found to be preferable for SAW wafers because the wafer is cut parallel to the growing face, resulting in greater homogeneity and increased yield. Procedures for Al impurity reduction to improve radiation resistance are described. Procedures for using SiO2 glass with a very low Al content as nutrient are described. Etch channels are shown to be decorated dislocations, and measures which reduce dislocations (using dislocation free seeds, reducing particular inclusions, and minimizing seed-grown material lattice mismatch) are shown to be effective
Keywords
quartz; surface acoustic wave devices; Al impurity; SAW wafers; SiO2 glass; decorated dislocations; inclusions; lattice mismatch; low-dislocation-density material; r-bar quartz; radiation hard quartz; Electrical resistance measurement; Etching; Glass; Impurities; Laboratories; Lattices; Particle measurements; Production facilities; Sawing machines; Surface acoustic waves;
fLanguage
English
Publisher
ieee
Conference_Titel
Frequency Control Symposium, 1988., Proceedings of the 42nd Annual
Conference_Location
Baltimore, MD
Type
conf
DOI
10.1109/FREQ.1988.27592
Filename
27592
Link To Document