DocumentCode :
1656607
Title :
A merged MEMS-CMOS process using silicon wafer bonding
Author :
Parameswaran, Lalitha ; Hsu, Charles ; Schmidt, Martin A.
Author_Institution :
Microsystems Technol. Lab., MIT, Cambridge, MA, USA
fYear :
1995
Firstpage :
613
Lastpage :
616
Abstract :
A process for fabricating integrated silicon micromachined sensors is demonstrated. The process uses silicon wafer bonding to create a substrate that can be inserted into an existing IC fabrication line without perturbation of the line. After circuits are completed, micromachining steps are performed to release the silicon membranes and form the sensors. A variety of test structures including MOSFETs, piezoresistive pressure sensors and cantilever beams were successfully fabricated, and all were functional, indicating that the additional micromachining steps and CMOS thermal cycles caused no adverse effects to the devices
Keywords :
CMOS integrated circuits; elemental semiconductors; integrated circuit testing; micromachining; microsensors; pressure sensors; silicon; wafer bonding; IC fabrication line; MOSFETs; Si; cantilever beams; merged MEMS-CMOS process; micromachined sensors; piezoresistive pressure sensors; test structures; thermal cycles; wafer bonding; Biomembranes; Circuit testing; Fabrication; MOSFETs; Micromachining; Piezoresistance; Silicon; Structural beams; Thermal sensors; Wafer bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
ISSN :
0163-1918
Print_ISBN :
0-7803-2700-4
Type :
conf
DOI :
10.1109/IEDM.1995.499296
Filename :
499296
Link To Document :
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