DocumentCode
1656607
Title
A merged MEMS-CMOS process using silicon wafer bonding
Author
Parameswaran, Lalitha ; Hsu, Charles ; Schmidt, Martin A.
Author_Institution
Microsystems Technol. Lab., MIT, Cambridge, MA, USA
fYear
1995
Firstpage
613
Lastpage
616
Abstract
A process for fabricating integrated silicon micromachined sensors is demonstrated. The process uses silicon wafer bonding to create a substrate that can be inserted into an existing IC fabrication line without perturbation of the line. After circuits are completed, micromachining steps are performed to release the silicon membranes and form the sensors. A variety of test structures including MOSFETs, piezoresistive pressure sensors and cantilever beams were successfully fabricated, and all were functional, indicating that the additional micromachining steps and CMOS thermal cycles caused no adverse effects to the devices
Keywords
CMOS integrated circuits; elemental semiconductors; integrated circuit testing; micromachining; microsensors; pressure sensors; silicon; wafer bonding; IC fabrication line; MOSFETs; Si; cantilever beams; merged MEMS-CMOS process; micromachined sensors; piezoresistive pressure sensors; test structures; thermal cycles; wafer bonding; Biomembranes; Circuit testing; Fabrication; MOSFETs; Micromachining; Piezoresistance; Silicon; Structural beams; Thermal sensors; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location
Washington, DC
ISSN
0163-1918
Print_ISBN
0-7803-2700-4
Type
conf
DOI
10.1109/IEDM.1995.499296
Filename
499296
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