Title :
The effects of using buffer layers on nanowire bonding and conductance properties of graphene based electronic devices
Author :
Udayakumar, N. ; Chakraborty, A. ; Irannejad, M. ; Cui, B. ; Brzezinski, A. ; Yavuz, M.
Author_Institution :
Waterloo Inst. for Nanotechnol., Univ. of Waterloo, Waterloo, ON, Canada
Abstract :
Nanowire bonding and conductivity of the graphene based transistors at contact interfaces were investigated numerically. It was found that using MoS2 as a buffer layer provides the highest conductivity and smallest overall stress, which makes it preferable for graphene electronic device fabrication.
Keywords :
buffer layers; electrical conductivity; graphene; lead bonding; nanowires; transistors; MoS2; buffer layers effect; conductance property; contact interface; graphene electronic device fabrication; graphene transistor conductivity; nanowire bonding; Bonding; Buffer layers; Conductivity; Graphene; Stress; Wires;
Conference_Titel :
Nanotechnology (IEEE-NANO), 2014 IEEE 14th International Conference on
Conference_Location :
Toronto, ON
DOI :
10.1109/NANO.2014.6968079
