Photoreflectance study of strained GaAsN/GaAs T-junction quantum wires grown by MOVPE

Author

Klangtakai, Pawinee ; Sanorpim, Sakuntam ; Katayama, Ryuji ; Onabe, Kentaro

Author_Institution

Dept. of Phys., Chulalongkorn Univ., Bangkok, Thailand

fYear

2010

Firstpage

402

Lastpage

403

Abstract

GaAsN/GaAs T-junction quantum wires (T-QWRs) grown by two steps of metal-organic vapor phase epitaxy growth technique in (001) and (110) directions have been investigated by photoreflectance (PR) spectroscopy. PR resonances associated with extended states in all of GaAsN quantum well (QW) and TQWR have been observed. An evidence of a one-dimensional structure at T-intersection of the two quantum wells on the (001) and (110) surfaces was clearly confirmed. Further evidence of T-QWRs was investigated by temperature dependence of PR spectra from 10 to 300 K. For GaAsN T-QWRs, PR peak position remain constant when temperature increases from 10 to 100 K. This indicates high thermal stability of QWRs structure.

Keywords

III-V semiconductors; MOCVD; arsenic compounds; gallium arsenide; gallium compounds; photoreflectance; semiconductor growth; semiconductor junctions; semiconductor quantum wires; thermal stability; vapour phase epitaxial growth; (001) direction; (001) surface; (110) direction; (110) surface; GaAsN-GaAs; MOVPE growth; T-intersection; T-junction quantum wires; metal-organic vapor phase epitaxy growth technique; one-dimensional structure; photoreflectance; temperature 10 K to 300 K; thermal stability; Energy states; Epitaxial growth; Epitaxial layers; Gallium arsenide; Laser applications; Laser stability; Physics; Spectroscopy; Temperature dependence; Wires;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2010 3rd International

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-3543-2

Electronic_ISBN

978-1-4244-3544-9

Type

conf

DOI

10.1109/INEC.2010.5424516

Filename

5424516