Reliability analysis of full adder in Schottky Barrier Carbon Nanotube FET technology

Author

Srinivasu, B. ; Sridharan, K.

Author_Institution

Dept. of Electr. Eng., Indian Inst. of Technol. Madras, Chennai, India

fYear

2014

fDate

18-21 Aug. 2014

Firstpage

274

Lastpage

277

Abstract

The reliability of digital circuits designed in Schottky Barrier Carbon Nanotube Field Effect Transistor (SB-CNTFET) technology is investigated in this paper. We discuss factors that affect the height of the Schottky barrier and as a consequence the performance of circuits in SB-CNTFET. We then present a transistor-level analysis of reliability. The analysis is performed first for an inverter and a 2-to-1 multiplexer. It is then used to get an estimate of the probabilistic behaviour of a one-bit full-adder.

Keywords

Schottky barriers; adders; carbon nanotubes; field effect transistors; integrated circuit reliability; invertors; multiplexing equipment; probability; 2-to-1 multiplexer; SB-CNTFET; Schottky barrier carbon nanotube FET technology; field effect transistor technology; inverter; one-bit full-adder; probabilistic behaviour; reliability analysis; transistor-level analysis; CNTFETs; Equations; Integrated circuit reliability; Inverters; Multiplexing; Adder; Multiplexer; Nanoelectronic circuits; Reliability; Schottky Barrier Carbon Nanotube Field Effect Transistor;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology (IEEE-NANO), 2014 IEEE 14th International Conference on

Conference_Location

Toronto, ON

Type

conf

DOI

10.1109/NANO.2014.6968085

Filename

6968085