SOI MOSFET design for all-dimensional scaling with short channel, narrow width and ultra-thin films

The effects of scaling MESA isolated (with sidewall reoxidation) SOI MOSFETs with respect to channel length, channel width, silicon film thickness and buried oxide thickness have been studied experimentally. Characteristics of narrow-width devices have a strong dependence on T _Si. In devices with small T_Si, narrow-width effect dominates over short channel effect. Thin buried oxide reduces self-heating and short channel effect, but results in a lower intrinsic current drive due to the effect of backside coupling. The trade-offs and limitations for scaling individual dimension in MESA isolated SOI MOSFETs are discussed