Title :
Novel device lifetime behavior and hot-carrier degradation mechanisms under VGS≈VTH stress for thin-film SOI nMOSFETs
Author :
Wang-Ratkovic, J. ; Huang, W.M. ; Hwang, B.Y. ; Racanelli, M. ; Forestner, J. ; Woo, J.
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
Abstract :
The thin-film SOI (TFSOI) MOSFET is found to have the worst device lifetime projection for a gate voltage condition of VGS≈V TH and a drain voltage below the breakdown voltage. A detailed study of the hot-carrier degradation as a function of the drain stress for this gate condition shows evidence of a transforming hot-carrier behavior and mechanism. New understanding of the dominating hot-carrier mechanisms in TFSOI MOSFETs stressed under VGS≈VTH is reported. A model of these mechanisms accounting for the observed degradation behaviors is proposed
Keywords :
MOSFET; hot carriers; semiconductor device models; semiconductor device reliability; silicon-on-insulator; device lifetime behavior; drain stress; gate voltage condition; hot-carrier degradation mechanisms; thin-film SOI nMOSFETs; Breakdown voltage; Degradation; Extrapolation; Hot carrier effects; Hot carriers; Low voltage; MOSFET circuits; Stress; Transistors; Virtual manufacturing;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.499301
