Title :
Damascene planar metal-insulator-metal tunnel junctions
Author :
Droulers, Gabriel ; Ecoffey, Serge ; Guilmain, Marc ; Souifi, Abdelkader ; Pioro-Ladriere, Michel ; Drouin, Dominique
Author_Institution :
Lab. Nanotechnol. Nanosystemes (LN2), Univ. de Sherbrooke, Sherbrooke, QC, Canada
Abstract :
In this paper, we show a process for the fabrication of planar sub-attofarad capacitance metal-insulator-metal tunnel junctions with nanometer size. We show the engineering of the material stack, anti-diffusion barrier and electrode metal as well as the result of improved characteristics and stability in time of the devices. This engineering is supported by a simulation tool we developed and its goal is to optimize the original process for the development of high-temperature operating SETs and other innovative nanoelectronic devices.
Keywords :
MIM devices; diffusion barriers; electrodes; nanoelectronics; nanofabrication; nanostructured materials; single electron transistors; tunnelling; antidiffusion barrier; damascene planar metal-insulator-metal tunnel junctions; electrode metal; high-temperature operating SETs; innovative nanoelectronic devices; material stack; nanometer size; planar subattofarad capacitance metal-insulator-metal tunnel junctions; Aluminum oxide; Junctions; Materials; Oxidation; Plasmas; Tin;
Conference_Titel :
Nanotechnology (IEEE-NANO), 2014 IEEE 14th International Conference on
Conference_Location :
Toronto, ON
DOI :
10.1109/NANO.2014.6968094
