DocumentCode
1656899
Title
A front gate charge pumping technique for measuring both interfaces in fully depleted SOI/MOSFETs
Author
Li, Yujun ; Wang, Guobin ; Ma, T.P.
Author_Institution
Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA
fYear
1995
Firstpage
643
Lastpage
646
Abstract
A simple front-gate charge pumping technique has been developed, which enables the measurement of interface traps at both the front and the back interfaces of a fully depleted SOI/MOSFET. It is based on the strong coupling between the two interfaces, and its validity has been verified both experimentally and by computer simulation
Keywords
MOSFET; electron traps; interface states; silicon-on-insulator; back interface; computer simulation; front gate charge pumping technique; front interface; fully depleted SOI/MOSFETs; interface trap measurement; Charge measurement; Charge pumps; Computer simulation; Current measurement; MOSFETs; Microelectronics; Pulse measurements; Semiconductor device measurement; Semiconductor films; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location
Washington, DC
ISSN
0163-1918
Print_ISBN
0-7803-2700-4
Type
conf
DOI
10.1109/IEDM.1995.499302
Filename
499302
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