A new mobility model for pocket implanted quarter micron n-MOSFETs and below

Author

Klein, Peter ; Chladek, Steffen

Volume

3

fYear

2001

fDate

6/23/1905 12:00:00 AM

Firstpage

1587

Abstract

A new, analytical, physically-based effective surface mobility model valid in all regimes of device operation from weak to strong inversion is introduced. The model accounts for all relevant scattering processes vs. the electric field and temperature as well as for the lateral nonuniform 2D doping profile in pocket implanted MOSFETs. Measurements show that the mobility degradation due to Coulomb scattering with ionized dopants in the heavily doped pocket implanted regions cause a reduction of the surface mobility of up to 30% at low gate-to-source overdrive voltage (V_GS=V_th+100-200 mV)

Keywords

MOSFET; carrier mobility; doping profiles; heavily doped semiconductors; inversion layers; ion implantation; semiconductor device measurement; semiconductor device models; Coulomb scattering; device operation regimes; effective surface mobility model; electric field; gate-to-source overdrive voltage; heavily doped pocket implanted regions; ionized dopants; lateral nonuniform 2D doping profile; mobility degradation; mobility model; pocket implanted MOSFETs; pocket implanted n-MOSFETs; scattering processes; strong inversion regime; surface mobility; weak inversion regime; Current measurement; Degradation; Doping profiles; Electronic mail; Implants; MOSFET circuits; Scattering; Semiconductor process modeling; Temperature; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems, 2001. ICECS 2001. The 8th IEEE International Conference on

Print_ISBN

0-7803-7057-0

Type

conf

DOI

10.1109/ICECS.2001.957520

Filename

957520