A 0.35 μm CMOS DCS front-end with fully integrated VCO

Author

Cijvat, Ellie

Author_Institution

Dept. of Electroscience, Lund Univ., Sweden

Volume

3

fYear

2001

fDate

6/23/1905 12:00:00 AM

Firstpage

1595

Abstract

The design of a 0.35 μm CMOS front-end is presented which meets the DCS requirements. The front-end consists of a low-noise amplifier operating at 1.85 GHz, a mixer downconverting the RF signal to an IF of up to 250 MHz, and a fully integrated voltage controlled oscillator with a tuning range of 460 MHz. The total power consumption is 34 mW with a 2.5 V supply, and the simulated maximum RF to IF gain is 26.6 dB

Keywords

CMOS integrated circuits; UHF amplifiers; UHF integrated circuits; UHF mixers; cellular radio; circuit simulation; digital radio; integrated circuit design; integrated circuit modelling; voltage-controlled oscillators; 0.35 micron; 1.85 GHz; 2.5 V; 250 MHz; 26.6 dB; 34 mW; CMOS DCS front-end; CMOS front-end design; DCS requirements; RF signal downconversion; integrated VCO; integrated voltage controlled oscillator; low-noise amplifier; mixer; simulated maximum RF to IF gain; total power consumption; tuning range; Band pass filters; CMOS technology; Distributed control; Impedance; Low-noise amplifiers; Radio frequency; Signal to noise ratio; Telephone sets; Tuning; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems, 2001. ICECS 2001. The 8th IEEE International Conference on

Print_ISBN

0-7803-7057-0

Type

conf

DOI

10.1109/ICECS.2001.957522

Filename

957522