Title :
A 0.35 μm SiGe BiCMOS front end for GSM low IF cellular receiver applications
Author :
Dermentzoglou, L. ; Kamoulakos, G. ; Arapoyanni, A.
Author_Institution :
ISD S.A, Athens, Greece
fDate :
6/23/1905 12:00:00 AM
Abstract :
This work presents the design and simulation of a cellular receiver front end for GSM applications implemented in 0.35 SiGe BiCMOS technology. The low noise amplifier is designed using bipolar transistors, and achieves a voltage gain of 17 dB at 950 MHz, while its noise figure is suppressed to 1.9 dB in the same frequency region. The resulting 1 dB compression point is -12 dBm and the IIP3 is -3 dBm. The mixer is a double balanced Gilbert cell performing an IIP3 of 14 dBm, while the single sideband noise figure is around 12 dB. The whole structure is oriented to low IF receiver applications while the overall power consumption is 31 mW provided from a 3.3 V power supply
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; UHF amplifiers; UHF integrated circuits; UHF mixers; cellular radio; circuit simulation; integrated circuit design; integrated circuit modelling; integrated circuit noise; radio receivers; semiconductor materials; telephone sets; 0.35 micron; 1.9 dB; 12 dB; 17 dB; 3.3 V; 31 mW; 950 MHz; GSM applications; GSM low IF cellular receiver; SiGe; SiGe BiCMOS front end; SiGe BiCMOS technology; cellular receiver front end; compression point; design; double balanced Gilbert cell mixer; frequency region; low IF receiver applications; low noise amplifier; power consumption; power supply; simulation; single sideband noise figure; suppressed noise figure; voltage gain; BiCMOS integrated circuits; Bipolar transistors; Frequency; GSM; Gain; Germanium silicon alloys; Low-noise amplifiers; Noise figure; Silicon germanium; Voltage;
Conference_Titel :
Electronics, Circuits and Systems, 2001. ICECS 2001. The 8th IEEE International Conference on
Print_ISBN :
0-7803-7057-0
DOI :
10.1109/ICECS.2001.957525
