• DocumentCode
    1657218
  • Title

    Investigation of influence of synthesis parameters on length and purity of the CNTs grown by thermal chemical vapor deposition

  • Author

    Xu, Ting ; Miao, Jianmin

  • Author_Institution
    Micromachines Centre, Nanyang Technol. Univ., Singapore, Singapore
  • fYear
    2010
  • Firstpage
    83
  • Lastpage
    84
  • Abstract
    In this article, a systematic study was conducted to understand the influences of various synthesis parameters, such as catalyst thickness, catalyst pretreatment time, growth time, reaction gas flow rate, growth temperature, and pressure on the length and quality of carbon nanotubes (CNT) grown by thermal chemical vapor deposition (TCVD). CNT grown on iron deposited silicon oxide substrates were characterized by SEM and Raman spectroscopy. It was found that all of the synthesis parameters studied had an effect on both the length and quality of the CNT. After optimizing the various thermal CVD synthesis parameters, long CNT arrays of up to 380 ¿m could be synthesized for the potential application in multi-level interconnects.
  • Keywords
    Raman spectra; carbon nanotubes; chemical vapour deposition; scanning electron microscopy; C; CNT arrays; CNT growth; Raman spectroscopy; SEM; carbon nanotubes; catalyst pretreatment time; catalyst thickness; growth temperature; iron deposited silicon oxide substrates; multilevel interconnects; reaction gas flow rate; thermal chemical vapor deposition; Annealing; Argon; Chemical vapor deposition; Control system synthesis; Fluid flow; Gases; Hydrogen; Iron; Temperature; Thermal conductivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference (INEC), 2010 3rd International
  • Conference_Location
    Hong Kong
  • Print_ISBN
    978-1-4244-3543-2
  • Electronic_ISBN
    978-1-4244-3544-9
  • Type

    conf

  • DOI
    10.1109/INEC.2010.5424538
  • Filename
    5424538