DocumentCode
1657218
Title
Investigation of influence of synthesis parameters on length and purity of the CNTs grown by thermal chemical vapor deposition
Author
Xu, Ting ; Miao, Jianmin
Author_Institution
Micromachines Centre, Nanyang Technol. Univ., Singapore, Singapore
fYear
2010
Firstpage
83
Lastpage
84
Abstract
In this article, a systematic study was conducted to understand the influences of various synthesis parameters, such as catalyst thickness, catalyst pretreatment time, growth time, reaction gas flow rate, growth temperature, and pressure on the length and quality of carbon nanotubes (CNT) grown by thermal chemical vapor deposition (TCVD). CNT grown on iron deposited silicon oxide substrates were characterized by SEM and Raman spectroscopy. It was found that all of the synthesis parameters studied had an effect on both the length and quality of the CNT. After optimizing the various thermal CVD synthesis parameters, long CNT arrays of up to 380 ¿m could be synthesized for the potential application in multi-level interconnects.
Keywords
Raman spectra; carbon nanotubes; chemical vapour deposition; scanning electron microscopy; C; CNT arrays; CNT growth; Raman spectroscopy; SEM; carbon nanotubes; catalyst pretreatment time; catalyst thickness; growth temperature; iron deposited silicon oxide substrates; multilevel interconnects; reaction gas flow rate; thermal chemical vapor deposition; Annealing; Argon; Chemical vapor deposition; Control system synthesis; Fluid flow; Gases; Hydrogen; Iron; Temperature; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location
Hong Kong
Print_ISBN
978-1-4244-3543-2
Electronic_ISBN
978-1-4244-3544-9
Type
conf
DOI
10.1109/INEC.2010.5424538
Filename
5424538
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