• DocumentCode
    1657245
  • Title

    Interfacial nature of resistive switching effect in perovskite-oxide thin film devices

  • Author

    Lau, Hon-Kit ; Chan, Paddy Kwok-Leung ; Leung, Chi-Wah

  • Author_Institution
    Dept. of Appl. Phys. & Mater. Res. Centre, Hong Kong Polytech. Univ., Hong Kong, China
  • fYear
    2010
  • Firstpage
    744
  • Lastpage
    745
  • Abstract
    Resistive switching effect has been demonstrated in LaNiO3Pa0.7Ca0.3MnO3Ti top-down device structures. Hysteretic current-voltage (I-V) characteristic was observed by applying potential differences in the order of 5 V across the electrodes. I-V characteristics with different combinations of top and bottom electrodes were measured, in order to identify the location contributing to the switching. Our results suggested that the interface between PCMO and the electrodes are responsible for the resistive switching effect.
  • Keywords
    calcium compounds; electrodes; epitaxial layers; interface phenomena; lanthanum compounds; protactinium compounds; switching; thin film devices; titanium; LaNiO3-Pa0.7Ca0.3MnO3-Ti; PCMO; electrodes; hysteretic current-voltage characteristics; perovskite-oxide thin film devices; resistive switching effect; Electrodes; Geometrical optics; Hysteresis; Nonvolatile memory; Physics; Pulsed laser deposition; Substrates; Thin film devices; Voltage; Writing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference (INEC), 2010 3rd International
  • Conference_Location
    Hong Kong
  • Print_ISBN
    978-1-4244-3543-2
  • Electronic_ISBN
    978-1-4244-3544-9
  • Type

    conf

  • DOI
    10.1109/INEC.2010.5424539
  • Filename
    5424539
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1657245