Ultra-low power SRAM cells with unconventional sizing

Variations and noises are ubiquitous, but are still poorly understood and analyzed simplistically, leading in most cases to substantial overdesign. Lately, a novel reliability-centric design method based on unconventionally sizing transistors has been suggested. In this paper our goal is to design, simulate, analyze and compare the benefits of unconventional sizing when applied to ultra-low voltage/power/energy (ULV/P/E) SRAM cells. The re-sized SRAM cells are more reliable and have the potential to operate correctly at supply voltages below those achieved using classically sized SRAM cells. Our preliminary simulation results support such claims, while future directions of research will be suggested.