DocumentCode
1657463
Title
Growth mechanism, structural regulation and functionalization of carbon-based nanotubes
Author
Hu, Zheng
Author_Institution
Dept. of Chem., Nanjing Univ., Nanjing, China
fYear
2010
Firstpage
93
Lastpage
94
Abstract
The growth mechanism is a long-standing and controversial issue in the carbon nanotubes (CNTs)-related studies and has become a choke point for the development of this field. By using the in situ thermal analysis-mass spectroscopic technique, the CVD growth process of CNTs with benzene precursor has been clearly illuminated and the six-membered-ring-based growth mechanism through surface diffusion is deduced which is supported by the density functional theory calculations. Along this line, a synergism mechanism of C5N-six-membered-ring-based growth through surface diffusion and vapor-liquid-solid growth through bulk diffusion was further inferred for the synthesis of CNx nanotubes from pyridine precursor. Accordingly, the nitrogen contents thereof electronic properties of the CNx nanotubes have been effectively regulated. Due to the nitrogen participation, CNx nanotubes could be used for the facile construction of various nanocomposites which have great potential for applications in different fields such as catalysis, sensors and electronic devices.
Keywords
carbon compounds; carbon nanotubes; chemical vapour deposition; density functional theory; doping; electronic structure; mass spectroscopy; nanofabrication; surface diffusion; thermal analysis; C; C5N; CNx; CVD growth; benzene precursor; bulk diffusion; carbon nanotube structural regulation; density functional theory calculations; electronic property; functionalization; in situ thermal analysis mass spectroscopy; nitrogen-doped carbon nanotubes; pyridine precursor; six membered ring based growth mechanism; surface diffusion; vapor-liquid-solid growth; Chemical analysis; Chemical processes; Chemical sensors; Chemistry; Laboratories; Mechanical factors; Nanocomposites; Nanotubes; Nitrogen; Spectroscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location
Hong Kong
Print_ISBN
978-1-4244-3543-2
Electronic_ISBN
978-1-4244-3544-9
Type
conf
DOI
10.1109/INEC.2010.5424546
Filename
5424546
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