DocumentCode
1657497
Title
Improved infrared emissions of Er3+-Tm3+ codoped Al2 O3 thin films: The role of cross relaxation among rare earth ions
Author
Zhou, Bo ; Xiao, Zhisong ; Yan, Lu ; Zhu, Fang ; Zhang, Feng ; Huang, Anping ; Wang, Jinliang
Author_Institution
Sch. of Phys. & Nucl. Energy Eng., Beihang Univ., Beijing, China
fYear
2010
Firstpage
738
Lastpage
739
Abstract
Er3+-Tm3+ codoped amorphous Al2O3 thin films were synthesized using pulsed laser deposition and their photoluminescence (PL) properties were investigated. The infrared fluorescence was improved by post-annealing and a broadband emission was obtained. Three cross relaxation channels between Er3+-Tm3+ and Tm-Tm ions were observed for the films with annealing temperature increased from 800 to 850°C, which were further analyzed by deconvoluting the emission spectra using Gauss-fitting method. Our results suggest one possible approach to achieve wideband infrared emissions in the 1.45-1.65 ¿m wavelength region for the Er3+-Tm3+ codoped systems.
Keywords
alumina; annealing; erbium; fluorescence; optical films; photoluminescence; pulsed laser deposition; thulium; Al2O3:Er,Tm; Er3+-Tm3+ codoped amorphous alumina thin films; Er3+-Tm3+ ions; Gauss-fitting method; Tm-Tm ions; annealing temperature; cross relaxation; emission spectra; infrared emissions; infrared fluorescence; photoluminescence; pulsed laser deposition; rare earth ions; temperature 800 degC to 850 degC; wavelength 1.45 mum to 1.65 mum; Amorphous materials; Annealing; Erbium; Fluorescence; Gaussian channels; Optical pulses; Photoluminescence; Pulsed laser deposition; Sputtering; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location
Hong Kong
Print_ISBN
978-1-4244-3543-2
Electronic_ISBN
978-1-4244-3544-9
Type
conf
DOI
10.1109/INEC.2010.5424548
Filename
5424548
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