DocumentCode
1657546
Title
Analysis of the half-wave voltage and modulation bandwidth of electro-optical modulator considering the effect of conductor loss
Author
Feng, N.-N. ; Zhou, G.R. ; Fang, D.G. ; Huang, W.-P. ; Xu, C.L.
Author_Institution
Dept. of Electr. Eng., Nanjing Univ. of Sci. & Technol., China
fYear
1999
fDate
6/21/1905 12:00:00 AM
Firstpage
352
Lastpage
355
Abstract
The half-wave voltage Vπ and modulator bandwidth Δf of an LiNbO3 electro-optical modulator considering the effect of conductor loss is analyzed using the generalized method of lines. It is shown numerically that the conductor loss is not important in affecting Vπ but is equally important as electrode thickness and buffer layer thickness in affecting Δf.
Keywords
coplanar waveguides; electro-optical modulation; lithium compounds; method of lines; CPW electrode; LiNbO3; buffer layer thickness; conductor loss effect; electro-optical modulator; electrode thickness; generalized method of lines; half-wave voltage; modulation bandwidth; Bandwidth; Buffer layers; Conductivity; Conductors; Coplanar waveguides; Electrodes; Electrooptic modulators; Optical losses; Optical signal processing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Computational Electromagnetics and Its Applications, 1999. Proceedings. (ICCEA '99) 1999 International Conference on
Print_ISBN
0-7803-5802-3
Type
conf
DOI
10.1109/ICCEA.1999.825149
Filename
825149
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