Neutral base recombination in advanced SiGe HBTs and its impact on the temperature characteristics of precision analog circuits

Author

Joseph, Alvin J. ; Cressler, John D. ; Jaeger, Richard C. ; Richey, David M. ; Harame, David L.

Author_Institution

Dept. of Electr. Eng., Auburn Univ., AL, USA

fYear

1995

Firstpage

755

Lastpage

758

Abstract

We present the first comprehensive investigation of neutral base recombination (NBR) in advanced UHV/CVD SiGe HBTs, and quantitatively assess its impact on the temperature characteristics of precision analog circuits. We show that a direct consequence of NBR in SiGe HBT´s is the degradation of Early voltage (V_A) when transistors are operated with constant current input (forced-I_B). We quantitatively address the impact of NBR on precision SiGe analog circuits by incorporating the effect into a new version of SPICE, calibrating the SPICE models to data, and simulating different types of precision current sources across the temperature range of -55°C to 85°C

Keywords

Ge-Si alloys; bipolar analogue integrated circuits; constant current sources; electron-hole recombination; heterojunction bipolar transistors; semiconductor materials; -55 to 85 C; Early voltage degradation; SiGe; UHV/CVD SiGe; advanced SiGe HBTs; constant current input; neutral base recombination; precision analog circuits; precision current sources; temperature characteristics; Analog circuits; Degradation; Doping profiles; Germanium silicon alloys; Heterojunction bipolar transistors; Microelectronics; Photonic band gap; Silicon germanium; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1995. IEDM '95., International

Conference_Location

Washington, DC

ISSN

0163-1918

Print_ISBN

0-7803-2700-4

Type

conf

DOI

10.1109/IEDM.1995.499328

Filename

499328